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AS4C256M16D3-12BCN备选型号: IS43TR16256A-15HBL

AS4C256M16D3-12BCN

Alliance Memory, Inc.

IC DRAM 4G PARALLEL 96FBGA

12 Weeks
表面贴装
96-TFBGA
YES
96
Volatile
0°C~95°C TC
Tray
2014
Discontinued
3 (168 Hours)
96
EAR99
AUTO/SELF REFRESH
8542.32.00.36
1.5V
BOTTOM
未说明
1
0.8mm
未说明
4Gb 256M x 16
1
SYNCHRONOUS
800MHz
20ns
DRAM
Parallel
256MX16
16
15ns
15b
4 Gb
1.575V
1.425V
13mm
1.2mm
ROHS3 Compliant
无铅
-
-
-
-
IS43TR16256A-15HBL

ISSI, Integrated Silicon Solution Inc

4G, 1.5V, Ddr3, 256Mx16, 1333Mt/S @ 9-9-9, 96 Ball Bga (9Mm X13mm) Rohs

6 Weeks
表面贴装
96-TFBGA
-
96
Volatile
0°C~95°C TC
Tray
-
活跃
3 (168 Hours)
96
-
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
-
1.5V
BOTTOM
-
1
0.8mm
-
4Gb 256M x 16
1
SYNCHRONOUS
667MHz
20ns
DRAM
Parallel
256MX16
16
15ns
18b
4 Gb
1.575V
1.425V
13mm
1.2mm
ROHS3 Compliant
-
表面贴装
200mA
267mA
16b
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43TR85120A-125KBL	ISSI, Integrated Silicon Solution Inc	存储器	78-TFBGA	DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TWBGA	对比
	IS43TR16256A-15HBL	ISSI, Integrated Silicon Solution Inc	存储器	96-TFBGA	4G, 1.5V, Ddr3, 256Mx16, 1333Mt/S @ 9-9-9, 96 Ball Bga (9Mm X13mm) Rohs	对比