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AS4C2M32S-6BIN备选型号: IS42S32200L-7BLI

AS4C2M32S-6BIN

Alliance Memory, Inc.

IC DRAM 64M PARALLEL 90TFBGA

8 Weeks
表面贴装
90-TFBGA
YES
90
Volatile
-40°C~85°C TA
Tray
2013
活跃
3 (168 Hours)
90
AUTO/SELF REFRESH
3V~3.6V
BOTTOM
1
3.3V
0.8mm
3.3V
3.6V
3V
64Mb 2M x 32
1
166MHz
5.4ns
DRAM
Parallel
32b
2MX32
3-STATE
32
2ns
10b
64 Mb
0.002A
COMMON
4096
1248FP
1248
13mm
1.2mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
IS42S32200L-7BLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 90-Pin TFBGA

8 Weeks
表面贴装
90-TFBGA
-
90
Volatile
-40°C~85°C TA
Tray
-
活跃
3 (168 Hours)
90
AUTO/SELF REFRESH
3V~3.6V
BOTTOM
1
3.3V
0.8mm
3.3V
3.6V
3V
64Mb 2M x 32
1
143MHz
5.4ns
DRAM
Parallel
32b
2MX32
3-STATE
32
-
13b
64 Mb
0.002A
COMMON
4096
1248FP
1248
13mm
1.2mm
-
ROHS3 Compliant
-
表面贴装
EAR99
8542.32.00.02
90
不合格
90mA
SYNCHRONOUS
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S32200L-7BLI	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 90-Pin TFBGA	对比
	MT47H32M16NF-25E:H	Micron Technology Inc.	存储器	84-TFBGA	IC DRAM 512M PARALLEL 84FBGA	对比
	IS42S32200L-6BL	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 90-Pin TFBGA	对比