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AS4C32M8D1-5TIN备选型号: IS43R16800E-5TL

AS4C32M8D1-5TIN

Alliance Memory, Inc.

IC DRAM 256M PARALLEL 66TSOP II

8 Weeks
表面贴装
66-TSSOP (0.400, 10.16mm Width)
66-TSOP II
Volatile
-40°C~85°C TA
Tray
2006
活跃
3 (168 Hours)
85°C
-40°C
2.3V~2.7V
200MHz
Parallel
256Mb 32M x 8
200MHz
700ps
DRAM
Parallel
15ns
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
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IS43R16800E-5TL

ISSI, Integrated Silicon Solution Inc

DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM

8 Weeks
表面贴装
66-TSSOP (0.400, 10.16mm Width)
-
Volatile
0°C~70°C TA
Tray
-
活跃
3 (168 Hours)
-
-
2.3V~2.7V
-
-
128Mb 8M x 16
200MHz
700ps
DRAM
Parallel
15ns
ROHS3 Compliant
表面贴装
66
66
AUTO/SELF REFRESH
DUAL
1
2.5V
0.65mm
不合格
2.5V
2.7V
2.3V
1
240mA
SYNCHRONOUS
16b
8MX16
3-STATE
16
14b
128 Mb
0.003A
COMMON
4096
248
248
22.22mm
1.2mm
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS43R16160F-5TL	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP-II	对比
	IS43R16800E-5TL	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM	对比