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AS4C4M16SA-6BAN备选型号: IS42S16400J-6BL-TR

AS4C4M16SA-6BAN

Alliance Memory, Inc.

IC DRAM 64M PARALLEL 54TFBGA

8 Weeks
表面贴装
54-TFBGA
Volatile
-40°C~105°C TA
Tray
Automotive, AEC-Q100
2015
活跃
3 (168 Hours)
3V~3.6V
未说明
未说明
64Mb 4M x 16
166MHz
5.4ns
DRAM
Parallel
2ns
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS42S16400J-6BL-TR

ISSI, Integrated Silicon Solution Inc

DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA T/R

6 Weeks
表面贴装
54-TFBGA
Volatile
0°C~70°C TA
Tape & Reel (TR)
-
-
活跃
3 (168 Hours)
3V~3.6V
-
-
64Mb 4M x 16
166MHz
5.4ns
DRAM
Parallel
-
ROHS3 Compliant
表面贴装
54
54
BOTTOM
3.3V
0.8mm
3.3V
100mA
16b
4MX16
3-STATE
16
14b
64 Mb
0.002A
COMMON
4096
1248FP
1248
无
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS42S16400J-6BLI-TR	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	IC DRAM 64M PARALLEL 54TFBGA	对比
	IS42S16400J-6BL-TR	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TFBGA T/R	对比