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AS4C512M8D3-12BCNTR备选型号: MT41K512M8DA-107:P

AS4C512M8D3-12BCNTR

Alliance Memory, Inc.

IC SDRAM 4GBIT 800MHZ 78BGA

表面贴装
78-TFBGA
78
78-FBGA (9x10.5)
Volatile
0°C~95°C TC
Tape & Reel (TR)
2014
Discontinued
3 (168 Hours)
95°C
0°C
1.425V~1.575V
800MHz
1.5V
Parallel
4Gb 512M x 8
800MHz
20ns
DRAM
Parallel
15ns
16b
4 Gb
800MHz
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT41K512M8DA-107:P

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

表面贴装
78-TFBGA
78
-
Volatile
0°C~95°C TC
Tray
2015
活跃
3 (168 Hours)
-
-
1.283V~1.45V
-
1.35V
-
4Gb 512M x 8
933MHz
20ns
DRAM
Parallel
-
16b
4 Gb
-
ROHS3 Compliant
表面贴装
Copper, Silver, Tin
78
EAR99
AUTO/SELF REFRESH
BOTTOM
未说明
1
1.35V
0.8mm
未说明
1.45V
1.283V
1
SYNCHRONOUS
8b
512MX8
8
10.5mm
1.2mm
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	MT41K512M8DA-107:P	Micron Technology Inc.	存储器	78-TFBGA	IC DRAM 4G PARALLEL 78FBGA	对比
	IS43TR85120A-125KBL	ISSI, Integrated Silicon Solution Inc	存储器	78-TFBGA	DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TWBGA	对比
	IS43TR85120A-15HBL	ISSI, Integrated Silicon Solution Inc	存储器	78-TFBGA	DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TWBGA	对比