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AS4C512M8D3-12BIN备选型号: IS43TR85120A-125KBL

AS4C512M8D3-12BIN

Alliance Memory, Inc.

IC SDRAM 4GBIT 800MHZ 78BGA

表面贴装
78-TFBGA
YES
78
Volatile
-40°C~95°C TC
Tray
2014
Discontinued
3 (168 Hours)
78
EAR99
AUTO/SELF REFRESH
8542.32.00.36
1.5V
BOTTOM
1
0.8mm
4Gb 512M x 8
1
SYNCHRONOUS
800MHz
20ns
DRAM
Parallel
512MX8
8
15ns
16b
4 Gb
1.575V
1.425V
10.5mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
IS43TR85120A-125KBL

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TWBGA

表面贴装
78-TFBGA
YES
78
Volatile
0°C~95°C TC
Tray
-
活跃
3 (168 Hours)
78
-
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
-
1.5V
BOTTOM
1
0.8mm
4Gb 512M x 8
1
SYNCHRONOUS
800MHz
20ns
DRAM
Parallel
512MX8
8
15ns
16b
4 Gb
1.575V
1.425V
10.5mm
1.2mm
ROHS3 Compliant
8 Weeks
不合格
3-STATE
0.018A
COMMON
8192
48
48
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图片	产品型号	品牌	分类	封装	描述	对比
	MT41K512M8DA-107:P	Micron Technology Inc.	存储器	78-TFBGA	IC DRAM 4G PARALLEL 78FBGA	对比
	IS43TR85120A-125KBL	ISSI, Integrated Silicon Solution Inc	存储器	78-TFBGA	DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TWBGA	对比
	IS43TR85120A-15HBL	ISSI, Integrated Silicon Solution Inc	存储器	78-TFBGA	DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TWBGA	对比