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AS4C8M16D1-5TCNTR备选型号: IS43R16800E-5TL

AS4C8M16D1-5TCNTR

Alliance Memory, Inc.

DRAM 128Mb, 3.3V, 200Mhz 8M x 16 DDR

表面贴装
66-TSSOP (0.400, 10.16mm Width)
YES
66
Volatile
0°C~70°C TA
Tape & Reel (TR)
2013
e3/e6
yes
Obsolete
3 (168 Hours)
66
EAR99
PURE MATTE TIN/TIN BISMUTH
AUTO/SELF REFRESH
8542.32.00.02
2.3V~2.7V
DUAL
260
1
2.5V
0.65mm
40
66
2.5V
2.625V
2.375V
128Mb 8M x 16
1
200MHz
700ps
DRAM
Parallel
16b
8MX16
16
15ns
12b
128 Mb
22.22mm
1.2mm
无
符合RoHS标准
-
-
-
-
-
-
-
-
-
-
-
IS43R16800E-5TL

ISSI, Integrated Silicon Solution Inc

DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM

表面贴装
66-TSSOP (0.400, 10.16mm Width)
-
66
Volatile
0°C~70°C TA
Tray
-
-
-
活跃
3 (168 Hours)
66
-
-
AUTO/SELF REFRESH
-
2.3V~2.7V
DUAL
-
1
2.5V
0.65mm
-
-
2.5V
2.7V
2.3V
128Mb 8M x 16
1
200MHz
700ps
DRAM
Parallel
16b
8MX16
16
15ns
14b
128 Mb
22.22mm
1.2mm
-
ROHS3 Compliant
8 Weeks
表面贴装
不合格
240mA
SYNCHRONOUS
3-STATE
0.003A
COMMON
4096
248
248
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS43R16800E-5TLI	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM	对比
	IS43R16800E-5TL	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM 128M (8Mx16) 200MHz 2.5v DDR SDRAM	对比
	IS43R16160F-6TLI	ISSI, Integrated Silicon Solution Inc	存储器	66-TSSOP (0.400, 10.16mm Width)	DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP-II	对比