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AS62V256A-70SIN备选型号: IS63WV1288DBLL-10TLI

AS62V256A-70SIN

Alliance Memory, Inc.

IC SRAM 256K PARALLEL 28SOP

6 Weeks
表面贴装
28-SOIC (0.330, 8.38mm Width)
YES
Volatile
-40°C~85°C TA
Tube
2012
e3/e6
yes
活跃
3 (168 Hours)
28
PURE MATTE TIN/TIN BISMUTH
ALSO OPERATES AT MIN 2.7 V
2.5V~3.6V
DUAL
260
1
3.3V
1.27mm
40
28
R-PDSO-G28
不合格
3.6V
3/3.3V
2.5V
256Kb 32K x 8
SRAM
Parallel
32KX8
3-STATE
8
70ns
0.000005A
262144 bit
70 ns
COMMON
2V
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
IS63WV1288DBLL-10TLI

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 2.5V/3.3V 1M-Bit 128K x 8 10ns 32-Pin TSOP-II

8 Weeks
表面贴装
32-SOIC (0.400, 10.16mm Width)
YES
Volatile
-40°C~85°C TA
Tray
-
e3
yes
活跃
3 (168 Hours)
32
Matte Tin (Sn)
-
2.4V~3.6V
DUAL
260
1
-
-
40
32
-
-
3.6V
2.5/3.3V
2.4V
1Mb 128K x 8
SRAM
Parallel
-
3-STATE
8
10ns
0.000055A
-
-
COMMON
2V
ROHS3 Compliant
32
1
55mA
17b
1 Mb
Asynchronous
8b
20.95mm
无
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS63WV1288DBLL-10TLI	ISSI, Integrated Silicon Solution Inc	存储器	32-SOIC (0.400, 10.16mm Width)	SRAM Chip Async Single 2.5V/3.3V 1M-Bit 128K x 8 10ns 32-Pin TSOP-II	对比
	AS6C62256-55SINTR	Alliance Memory, Inc.	存储器	28-SOIC (0.330, 8.38mm Width)	SRAM 256K, 2.7-5.5V, 55ns 32K x 8 Asynch SRAM	对比
	71V124SA12PHG	Integrated Device Technology (IDT)	存储器	SOIC	SRAM 128Kx8 ASYNCHRONOUS 3.3V STATIC RAM	对比