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AS6C1616A-55BIN备选型号: IS62WV10248DBLL-55MLI

AS6C1616A-55BIN

Alliance Memory, Inc.

SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM

8 Weeks
表面贴装
表面贴装
48-VFBGA
48
Volatile
-40°C~85°C TA
Tray
1997
yes
活跃
3 (168 Hours)
48
2.7V~3.6V
BOTTOM
1
3.3V
0.75mm
1MHz
48
3.3V
3.6V
2.7V
16Mb 1M x 16
1
SRAM
Parallel
55ns
20b
16 Mb
55 ns
700μm
8.05mm
10.05mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
IS62WV10248DBLL-55MLI

ISSI, Integrated Silicon Solution Inc

SRAM 8M (1Mx8) 55ns Async SRAM

-
-
表面贴装
48-TFBGA
48
Volatile
-40°C~85°C TA
Tray
-
yes
活跃
3 (168 Hours)
48
2.4V~3.6V
BOTTOM
1
1.8V
0.75mm
-
48
-
2.2V
-
8Mb 1M x 8
1
SRAM
Parallel
55ns
20b
8 Mb
55 ns
-
-
-
无
ROHS3 Compliant
-
YES
e1
锡银铜
260
10
2.5/3.3V
25mA
3-STATE
8
0.00004A
COMMON
Asynchronous
8b
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS62WV10248DBLL-55MLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	SRAM 8M (1Mx8) 55ns Async SRAM	对比
	IS62WV12816BLL-55BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 2M PARALLEL 48MINIBGA	对比
	AS6C1616-70BIN	Alliance Memory, Inc.	存储器	48-LFBGA	SRAM 16M, 3V, 70ns 1024K x 16 Asyn SRAM	对比