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AS6C8008-55BIN备选型号: IS62WV51216BLL-55BLI

AS6C8008-55BIN

Alliance Memory, Inc.

SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM

8 Weeks
表面贴装
48-LFBGA
YES
48
Volatile
-40°C~85°C TA
Tray
2008
yes
活跃
3 (168 Hours)
48
SMD/SMT
3V
BOTTOM
260
1
0.75mm
40
3/5V
8Mb 1M x 8
1
SRAM
Parallel
3-STATE
8
55ns
20b
8 Mb
0.00005A
55 ns
COMMON
2V
5.5V
2.7V
8mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
IS62WV51216BLL-55BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 48MINIBGA

8 Weeks
表面贴装
48-TFBGA
YES
48
Volatile
-40°C~85°C TA
Tray
-
yes
活跃
3 (168 Hours)
48
-
3.3V
BOTTOM
260
1
0.75mm
10
-
8Mb 512K x 16
1
SRAM
Parallel
3-STATE
-
55ns
19b
8 Mb
0.00002A
55 ns
COMMON
-
3.6V
2.5V
8.8mm
无
ROHS3 Compliant
无铅
5mA
e1
Tin/Silver/Copper (Sn/Ag/Cu)
18MHz
Asynchronous
16b
900μm
7.3mm
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图片	产品型号	品牌	分类	封装	描述	对比
	AS6C4016-55BIN	Alliance Memory, Inc.	存储器	48-LFBGA	SRAM Chip Async Single 3V 4M-Bit 256K x 16 55ns 48-Pin TFBGA	对比
	IS62WV51216BLL-55BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 8M PARALLEL 48MINIBGA	对比
	AS6C8016-55BIN	Alliance Memory, Inc.	存储器	48-LFBGA	ALLIANCE MEMORY AS6C8016-55BIN SRAM, 8MB, 2.7-5.5V, 512KX16, TFBGA48	对比