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AS7C34096A-10JINTR备选型号: 71V424L10YG

AS7C34096A-10JINTR

Alliance Memory, Inc.

SRAM 4M, 3.3V, 10ns, FAST 512K x 8 Asynch SRAM

10 Weeks
表面贴装
36-BSOJ (0.400, 10.16mm Width)
YES
36
Volatile
-40°C~85°C TA
Tape & Reel (TR)
2001
yes
活跃
3 (168 Hours)
36
3.3V
DUAL
未说明
1
1.27mm
未说明
4Mb 512K x 8
SRAM
Parallel
512KX8
8
10ns
4 Mb
10 ns
3.6V
3V
23.495mm
3.7592mm
10.16mm
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V424L10YG

Integrated Device Technology (IDT)

SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM

12 Weeks
-
-
YES
36
RAM, SDR, SRAM - Asynchronous
-
-
2008
yes
活跃
3 (168 Hours)
36
3.3V
DUAL
260
1
-
-
512kB
-
-
-
-
-
4 Mb
-
3.6V
3V
23.4mm
3.76mm
10.2mm
符合RoHS标准
无铅
e3
Matte Tin (Sn) - annealed
70°C
0°C
J BEND
COMMERCIAL
Parallel
1
10 ns
3-STATE
19b
COMMON
3V
2.2mm
无
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图片	产品型号	品牌	分类	封装	描述	对比
	71V424L10YG	Integrated Device Technology (IDT)	存储器		SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM	对比
	71V424S10YG8	Integrated Device Technology (IDT)	存储器		IC SRAM 4M PARALLEL 36SOJ	对比
	71V424S10YG	Integrated Device Technology (IDT)	存储器		SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM	对比