登录 / 注册

产品

输入型号/关键词

AS7C34096A-10JINTR备选型号: 71V424S10YG

AS7C34096A-10JINTR

Alliance Memory, Inc.

SRAM 4M, 3.3V, 10ns, FAST 512K x 8 Asynch SRAM

10 Weeks
表面贴装
36-BSOJ (0.400, 10.16mm Width)
YES
36
Volatile
-40°C~85°C TA
Tape & Reel (TR)
2001
yes
活跃
3 (168 Hours)
36
3.3V
DUAL
未说明
1
1.27mm
未说明
4Mb 512K x 8
SRAM
Parallel
512KX8
8
10ns
4 Mb
10 ns
3.6V
3V
23.495mm
3.7592mm
10.16mm
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V424S10YG

Integrated Device Technology (IDT)

SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM

12 Weeks
-
-
-
36
RAM, SDR, SRAM - Asynchronous
-
-
2008
yes
活跃
3 (168 Hours)
36
3.3V
DUAL
260
1
-
-
512kB
-
-
-
-
-
4 Mb
-
3.6V
3V
23.4mm
3.76mm
10.2mm
符合RoHS标准
无铅
表面贴装
180mA
e3
Matte Tin (Sn) - annealed
70°C
0°C
J BEND
COMMERCIAL
Parallel
1
10 ns
3-STATE
19b
0.02A
COMMON
Asynchronous
8b
3V
2.2mm
无
添加型号

集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	71V424L10YG	Integrated Device Technology (IDT)	存储器		SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM	对比
	CY7C1049DV33-10VXI	Cypress Semiconductor Corp	存储器	36-BSOJ (0.400, 10.16mm Width)	SRAM, 4MBIT, PARALLEL, 10NS, 36SOJ	对比
	71V424S10YG	Integrated Device Technology (IDT)	存储器		SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM	对比