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BAS21LT3G备选型号: BAS19LT1G

BAS21LT3G

ON Semiconductor

DIODE GEN PURP 250V 200MA SOT23

ACTIVE (Last Updated: 1 day ago)
4 Weeks
Tin
表面贴装
TO-236-3, SC-59, SOT-23-3
YES
3
SILICON
1
Tape & Reel (TR)
e3
yes
活跃
1 (Unlimited)
3
EAR99
150°C
-55°C
8541.10.00.70
鸥翼
260
40
BAS21L
3
Dual
Small Signal =< 200mA (Io), Any Speed
Standard
100nA @ 200V
385mW
200mA
1.25V @ 200mA
200mA
100nA
-55°C~150°C
625mA
无卤素
200mA DC
1.25V
250V
200mA
50 ns
100nA
250V
5pF @ 0V 1MHz
625mA
625mA
50 ns
940μm
2.9mm
1.3mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
BAS19LT1G

ON Semiconductor

DIODE GEN PURP 120V 200MA SOT23

ACTIVE (Last Updated: 1 day ago)
4 Weeks
Tin
表面贴装
TO-236-3, SC-59, SOT-23-3
YES
3
SILICON
120V
Cut Tape (CT)
e3
yes
活跃
1 (Unlimited)
3
EAR99
150°C
-55°C
8541.10.00.70
鸥翼
260
40
BAS19
3
Single
Small Signal =< 200mA (Io), Any Speed
Standard
100nA @ 100V
385mW
200mA
1.25V @ 200mA
200mA
100nA
-55°C~150°C
625mA
无卤素
200mA DC
1.25V
120V
200mA
50 ns
100nA
120V
5pF @ 0V 1MHz
625mA
625mA
50 ns
940μm
2.9mm
1.3mm
无SVHC
无
ROHS3 Compliant
无铅
5pF
DUAL
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分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	BAS19LT1G	ON Semiconductor	二极管 - 整流器 - 单	TO-236-3, SC-59, SOT-23-3	DIODE GEN PURP 120V 200MA SOT23	对比
	BAS20LT3G	ON Semiconductor	二极管 - 整流器 - 单	TO-236-3, SC-59, SOT-23-3	DIODE GEN PURP 200V 200MA SOT23	对比