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CY7C1041CV33-10BAJXE备选型号: 71V416S15BEI

CY7C1041CV33-10BAJXE

Cypress Semiconductor Corp

SRAM Chip Async Single 3.3V 4M-bit 256K x 16 10ns Automotive 48-Pin BGA

7 Weeks
表面贴装
表面贴装
48-TFBGA
48
Volatile
130mA
-40°C~125°C TA
Tray
1996
e1
Discontinued
3 (168 Hours)
48
Tin/Silver/Copper (Sn/Ag/Cu)
3.3V
BOTTOM
260
1
0.75mm
40
4Mb 256K x 16
1
SRAM
Parallel
16
10ns
18b
4 Mb
Asynchronous
16b
3.63V
2.97V
8mm
无
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V416S15BEI

Integrated Device Technology (IDT)

SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 15ns 48-Pin CABGA Tube/Tray

12 Weeks
表面贴装
-
TFBGA
48
RAM, SDR, SRAM - Asynchronous
170mA
-
-
2014
e0
活跃
4 (72 Hours)
48
Tin/Lead (Sn63Pb37)
3.3V
BOTTOM
225
1
0.75mm
20
512kB
1
-
-
-
-
18b
4 Mb
Asynchronous
16b
3.6V
3V
9mm
无
符合RoHS标准
no
85°C
-40°C
BALL
INDUSTRIAL
Parallel
15 ns
3-STATE
0.02A
COMMON
3V
9mm
1.2mm
含铅
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	71V416S15BEI	Integrated Device Technology (IDT)	存储器	TFBGA	SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 15ns 48-Pin CABGA Tube/Tray	对比