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CY7C1069G30-10ZSXI备选型号: IS61WV25616BLL-10TLI

CY7C1069G30-10ZSXI

Cypress Semiconductor Corp

IC SRAM 16M PARALLEL 54TSOP

13 Weeks
表面贴装
54-TSOP (0.400, 10.16mm Width)
YES
Volatile
-40°C~85°C TA
Tray
2012
e3
活跃
3 (168 Hours)
54
3A991.B.2.A
Tin (Sn)
8542.32.00.41
2.2V~3.6V
DUAL
260
1
3V
0.8mm
30
R-PDSO-G54
3.6V
2.2V
16Mb 2M x 8
SRAM
Parallel
2MX8
8
10ns
16777216 bit
10 ns
22.415mm
1.2mm
10.16mm
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS61WV25616BLL-10TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4M PARALLEL 44TSOP II

8 Weeks
表面贴装
44-TSOP (0.400, 10.16mm Width)
YES
Volatile
-40°C~85°C TA
Tray
-
e3
活跃
3 (168 Hours)
44
-
Matte Tin (Sn) - annealed
-
2.4V~3.6V
DUAL
260
1
3.3V
0.8mm
40
-
3.6V
2.4V
4Mb 256K x 16
SRAM
Parallel
-
-
10ns
-
-
18.54mm
-
10.29mm
ROHS3 Compliant
无铅
44
yes
44
2.5/3.3V
1
45mA
3-STATE
18b
4 Mb
0.009A
COMMON
Asynchronous
16b
2V
1.05mm
无
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图片	产品型号	品牌	分类	封装	描述	对比
	IS61WV25616BLL-10TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width)	IC SRAM 4M PARALLEL 44TSOP II	对比
	IS61WV5128BLL-10TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width)	IC SRAM 4M PARALLEL 44TSOP II	对比
	CY7C1019DV33-10ZSXI	Cypress Semiconductor Corp	存储器	32-SOIC (0.400, 10.16mm Width)	IC SRAM 1M PARALLEL 32TSOP II	对比