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CYDMX064B16-65BVXI备选型号: CYDMX256A16-65BVXI

CYDMX064B16-65BVXI

Cypress Semiconductor Corp

IC SRAM 64K PARALLEL 100VFBGA

表面贴装
100-VFBGA
YES
100
Volatile
-40°C~85°C TA
Tray
2011
e1
Obsolete
3 (168 Hours)
100
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
IT CAN OPERATE ALSO 2.5 AND 3.3 VOLT
8542.32.00.41
1.8V
BOTTOM
1
0.5mm
unknown
CYDMX
不合格
64Kb 4K x 16
ASYNCHRONOUS
SRAM
Parallel
4KX16
16
65ns
65536 bit
65 ns
1.9V
1.7V
6mm
1mm
6mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CYDMX256A16-65BVXI

Cypress Semiconductor Corp

IC SRAM 256K PARALLEL 100VFBGA

表面贴装
100-VFBGA
-
100
Volatile
-40°C~85°C TA
Tray
2011
e1
Obsolete
3 (168 Hours)
100
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
-
-
1.8V
BOTTOM
1
0.5mm
-
CYDMX
-
256Kb 16K x 16
-
SRAM
Parallel
16KX16
16
65ns
-
65 ns
1.9V
1.7V
6mm
1mm
-
ROHS3 Compliant
表面贴装
70mA
260
40
1.8/3V
2
3-STATE
14b
256 kb
0.000006A
COMMON
Asynchronous
16b
无
无铅
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	CYDMX064A16-65BVXI	Cypress Semiconductor Corp	存储器	100-VFBGA	SRAM Chip Async Dual 1.8V/2.5V/3V 64K-Bit 4K x 16 65ns 100-Pin VFBGA	对比
	CYDMX256A16-65BVXI	Cypress Semiconductor Corp	存储器	100-VFBGA	IC SRAM 256K PARALLEL 100VFBGA	对比
	IS43DR16160B-37CBL	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM 256Mb, 1.8V, 267MHz 16Mx16 DDR2 SDRAM	对比