登录 / 注册

产品

输入型号/关键词

DS1270AB-70IND备选型号: IS41C16100C-50TLI

DS1270AB-70IND

Maxim Integrated

IC NVSRAM 16M PARALLEL 36EDIP

通孔
36-DIP Module (0.600, 15.24mm)
NO
36
Non-Volatile
-40°C~85°C TA
Tube
2010
e0
Obsolete
1 (Unlimited)
36
3A991.B.2.A
锡铅
5 YEAR DATA RETENTION
8473.30.11.40
4.75V~5.25V
DUAL
1
5V
70GHz
DS1270AB
36
5V
16Mb 2M x 8
NVSRAM
Parallel
8b
2MX8
8
70ns
16 Mb
70 ns
无
Non-RoHS Compliant
含铅
-
-
-
-
-
-
-
-
-
IS41C16100C-50TLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip EDO 16Mbit 1Mx16 5V 44-Pin TSOP-II

表面贴装
50-TSOP (0.400, 10.16mm Width), 44 Leads
-
44
Volatile
-40°C~85°C TA
Tray
-
-
活跃
3 (168 Hours)
44
EAR99
-
CAS BEFORE RAS/SELF REFRESH/AUTO REFRESH
8542.32.00.02
4.5V~5.5V
DUAL
1
5V
-
-
44
5V
16Mb 1M x 16
DRAM
Parallel
16b
1MX16
16
-
16 Mb
-
无
ROHS3 Compliant
-
表面贴装
0.8mm
1
90mA
90mA
25ns
10b
20.95mm
1.2mm
添加型号

集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS41C16100C-50KLI	ISSI, Integrated Silicon Solution Inc	存储器	42-BSOJ (0.400, 10.16mm Width)	DRAM Chip EDO 16M-Bit 1Mx16 5V 42-Pin SOJ	对比
	IS41C16100C-50TLI	ISSI, Integrated Silicon Solution Inc	存储器	50-TSOP (0.400, 10.16mm Width), 44 Leads	DRAM Chip EDO 16Mbit 1Mx16 5V 44-Pin TSOP-II	对比
	BQ4017YMC-70	Texas Instruments	存储器	36-DIP Module (0.610, 15.49mm)	IC NVSRAM 16M PARALLEL 36DIP	对比