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FDC2512备选型号: FDC3601N

FDC2512

ON Semiconductor

ON SEMICONDUCTOR - FDC2512 - Power MOSFET, N Channel, 150 V, 1.4 A, 0.319 ohm, SuperSOT, Surface Mount

ACTIVE (Last Updated: 1 day ago)
15 Weeks
Tin
表面贴装
表面贴装
SOT-23-6 Thin, TSOT-23-6
6
SILICON
1.4A Ta
-55°C~150°C TJ
Tape & Reel (TR)
PowerTrench®
2017
e3
yes
活跃
1 (Unlimited)
6
SMD/SMT
EAR99
425MOhm
150V
DUAL
鸥翼
1.4A
1
150V
Single
14A
增强型MOSFET
1.6W
6.5 ns
N-Channel
SWITCHING
425m Ω @ 1.4A, 10V
4V @ 250μA
344pF @ 75V
11nC @ 10V
3.5ns
±20V
4 ns
1.4A
2.6V
20V
150V
150V
150°C
2.6 V
1.1mm
3mm
1.7mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
FDC3601N

ON Semiconductor

ON SEMICONDUCTOR - FDC3601N - Dual MOSFET, Dual N Channel, 1 A, 100 V, 0.5 ohm, 10 V, 2.6 V

ACTIVE (Last Updated: 1 day ago)
5 Weeks
-
表面贴装
表面贴装
SOT-23-6 Thin, TSOT-23-6
6
SILICON
2
-55°C~150°C TJ
Tape & Reel (TR)
PowerTrench®
-
e3
yes
活跃
1 (Unlimited)
6
-
EAR99
500MOhm
100V
-
鸥翼
1A
-
-
Dual
-
增强型MOSFET
960mW
8 ns
2 N-Channel (Dual)
SWITCHING
500m Ω @ 1A, 10V
4V @ 250μA
153pF @ 50V
5nC @ 10V
4ns
-
4 ns
1A
2.6V
20V
100V
-
-
-
1mm
3mm
1.7mm
无SVHC
无
ROHS3 Compliant
无铅
36mg
Tin (Sn)
960mW
700mW
1A
METAL-OXIDE SEMICONDUCTOR
Standard
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	FDC3601N	ON Semiconductor	晶体管 - FET，MOSFET - 阵列	SOT-23-6 Thin, TSOT-23-6	ON SEMICONDUCTOR - FDC3601N - Dual MOSFET, Dual N Channel, 1 A, 100 V, 0.5 ohm, 10 V, 2.6 V	对比
	FDC86244	ON Semiconductor	晶体管 - FET，MOSFET - 单个	SOT-23-6 Thin, TSOT-23-6	MOSFET 150V N-Channel PowerTrench MOSFET	对比
	FDC654P	ON Semiconductor	晶体管 - FET，MOSFET - 单个	SOT-23-6 Thin, TSOT-23-6	Trans MOSFET P-CH 30V 3.6A 6-Pin SuperSOT T/R	对比