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FGH40N60SMD备选型号: STGW20NC60VD

FGH40N60SMD

ON Semiconductor

IGBT 600V 80A 349W TO-247-3

5 Weeks
通孔
通孔
TO-247-3
3
6.39g
SILICON
600V
2.1V
-55°C~175°C TJ
Tube
2013
e3
yes
活跃
1 (Unlimited)
3
EAR99
Tin (Sn)
低导通损耗
8541.29.00.95
349W
FGH40N60
28ns
Single
COLLECTOR
Standard
349W
电源控制
N-CHANNEL
600V
80A
36 ns
TO-247AB
37 ns
2.5V @ 15V, 40A
132 ns
场站
119nC
120A
12ns/92ns
870μJ (on), 260μJ (off)
20V
6V
17ns
20.6mm
15.6mm
4.7mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
STGW20NC60VD

STMicroelectronics

STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins

8 Weeks
通孔
通孔
TO-247-3
3
38.000013g
SILICON
600V
2.5V
-55°C~150°C TJ
Tube
-
e3
-
活跃
1 (Unlimited)
3
EAR99
Tin (Sn)
超快
-
200W
STGW20
-
Single
-
Standard
-
电源控制
N-CHANNEL
600V
60A
44ns
-
42.5 ns
2.5V @ 15V, 20A
280 ns
-
100nC
150A
31ns/100ns
220μJ (on), 330μJ (off)
20V
5.75V
-
20.15mm
15.75mm
5.15mm
无SVHC
无
ROHS3 Compliant
无铅
ACTIVE (Last Updated: 8 months ago)
PowerMESH™
600V
30A
3
200W
31 ns
11.5ns
30A
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图片	产品型号	品牌	分类	封装	描述	对比
	STGW20NC60VD	STMicroelectronics	晶体管 - IGBT - 单个	TO-247-3	STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins	对比
	STGW39NC60VD	STMicroelectronics	晶体管 - IGBT - 单个	TO-247-3	STMICROELECTRONICS STGW39NC60VD IGBT Single Transistor, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pins	对比
	FGH80N60FDTU	ON Semiconductor	晶体管 - IGBT - 单个	TO-247-3	IGBT 600V 80A 290W TO247	对比