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FGH40N60SMDF备选型号: STGW39NC60VD

FGH40N60SMDF

ON Semiconductor

FAIRCHILD SEMICONDUCTOR FGH40N60SMDF IGBT Single Transistor, General Purpose, 80 A, 600 V, 349 W, 600 V, TO-247AB, 3 Pins

4 Weeks
Tin
通孔
通孔
TO-247-3
3
6.39g
SILICON
600V
1.9V
-55°C~175°C TJ
Tube
2013
e3
yes
活跃
1 (Unlimited)
3
EAR99
8541.29.00.95
349W
FGH40N60
28ns
Single
349W
COLLECTOR
Standard
12 ns
电源控制
N-CHANNEL
600V
80A
90ns
TO-247AB
37 ns
2.5V @ 15V, 40A
132 ns
场站
119nC
120A
12ns/92ns
1.3mJ (on), 260μJ (off)
20V
6V
17ns
20.6mm
15.6mm
4.7mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
STGW39NC60VD

STMicroelectronics

STMICROELECTRONICS STGW39NC60VD IGBT Single Transistor, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pins

8 Weeks
Tin
通孔
通孔
TO-247-3
3
-
SILICON
600V
1.8V
-55°C~150°C TJ
Tube
-
e3
-
活跃
1 (Unlimited)
3
EAR99
-
250W
STGW39
-
Single
250W
ISOLATED
Standard
33 ns
电源控制
N-CHANNEL
600V
80A
45ns
TO-247AC
46 ns
2.4V @ 15V, 30A
366 ns
-
126nC
220A
33ns/178ns
333μJ (on), 537μJ (off)
20V
5.75V
-
20.15mm
15.75mm
5.15mm
无SVHC
无
ROHS3 Compliant
无铅
ACTIVE (Last Updated: 7 months ago)
PowerMESH™
600V
40A
3
13ns
600V
40A
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图片	产品型号	品牌	分类	封装	描述	对比
	STGW39NC60VD	STMicroelectronics	晶体管 - IGBT - 单个	TO-247-3	STMICROELECTRONICS STGW39NC60VD IGBT Single Transistor, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 Pins	对比
	STGW60V60DF	STMicroelectronics	晶体管 - IGBT - 单个	TO-247-3	IGBT 600V 80A 375W TO247	对比
	NGTB35N60FL2WG	ON Semiconductor	晶体管 - IGBT - 单个	TO-247-3	ON SEMICONDUCTOR NGTB35N60FL2WGIGBT Single Transistor, 70 A, 1.7 V, 300 W, 600 V, TO-247, 3 Pins	对比