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GA35XCP12-247备选型号: HGTG27N120BN

GA35XCP12-247

GeneSiC Semiconductor

IGBT Transistors 1200V 35A SIC IGBT CoPak

18 Weeks
通孔
通孔
TO-247-3
3
1.2kV
3V
-40°C~150°C TJ
Tube
Obsolete
1 (Unlimited)
Standard
N-CHANNEL
3V
36 ns
1200V
3V @ 15V, 35A
PT
50nC
35A
2.66mJ (on), 4.35mJ (off)
20V
6.5V
符合RoHS标准
-
-
-
-
-
-
-
-
-
-
-
-
-
-
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-
-
-
-
-
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-
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-
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-
HGTG27N120BN

ON Semiconductor

FAIRCHILD SEMICONDUCTOR HGTG27N120BN IGBT Single Transistor, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3 Pins

44 Weeks
通孔
通孔
TO-247-3
3
1.2kV
2.45V
-55°C~150°C TJ
Tube
不用于新设计
1 (Unlimited)
Standard
N-CHANNEL
1.2kV
-
1200V
2.7V @ 15V, 27A
NPT
270nC
216A
2.2mJ (on), 2.3mJ (off)
-
-
ROHS3 Compliant
ACTIVE, NOT REC (Last Updated: 2 days ago)
6.39g
SILICON
e3
yes
3
EAR99
Tin (Sn)
LOW CONDUCTION LOSS, AVALANCHE RATED
8541.29.00.95
1.2kV
500W
72A
Single
500W
COLLECTOR
24 ns
电源控制
72A
42 ns
72A
360 ns
24ns/195ns
20.82mm
15.87mm
4.82mm
无SVHC
无
无铅
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