登录 / 注册

产品

输入型号/关键词

HGT1S10N120BNS备选型号: IRG4BH20K-STRLP

HGT1S10N120BNS

ON Semiconductor

Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2 Tab) TO-263AB Rail

ACTIVE, NOT REC (Last Updated: 1 day ago)
44 Weeks
Surface Mount, Through Hole
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
1.31247g
SILICON
1.2kV
2.7V
-55°C~150°C TJ
Tube
e3
yes
不用于新设计
1 (Unlimited)
2
EAR99
Tin (Sn)
低导通损耗
8541.29.00.95
1.2kV
312W
鸥翼
260
35A
30
HGT1S10N120
R-PSSO-G2
1.2kV
Single
35A
298W
COLLECTOR
Standard
MOTOR CONTROL
N-CHANNEL
1.2kV
35A
1200V
1.2kV
32 ns
2.7V @ 15V, 10A
55A
330 ns
NPT
100nC
80A
23ns/165ns
320μJ (on), 800μJ (off)
4.83mm
10.67mm
9.65mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
IRG4BH20K-STRLP

Infineon Technologies

IGBT 1200V 11A 60W D2PAK

-
13 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
-
SILICON
1.2kV
-
-55°C~150°C TJ
Tape & Reel (TR)
e3
-
最后一次购买
1 (Unlimited)
2
EAR99
Matte Tin (Sn) - with Nickel (Ni) barrier
低导通损耗
-
-
60W
鸥翼
260
-
30
-
R-PSSO-G2
-
Single
-
-
COLLECTOR
Standard
MOTOR CONTROL
N-CHANNEL
4.3V
11A
1200V
-
51 ns
4.3V @ 15V, 5A
-
720 ns
-
28nC
22A
23ns/93ns
450μJ (on), 440μJ (off)
-
-
-
无
ROHS3 Compliant
-
2000
60W
20V
6.5V
400ns
添加型号

分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	SKB02N120ATMA1	Infineon Technologies	晶体管 - IGBT - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(2 Tab) TO-263	对比
	FGB20N60SFD-F085	ON Semiconductor	晶体管 - IGBT - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	IGBT 600V 40A 208W D2PAK	对比
	IRG4BH20K-STRLP	Infineon Technologies	晶体管 - IGBT - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	IGBT 1200V 11A 60W D2PAK	对比