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HGTG27N120BN备选型号: STGW30NC120HD

HGTG27N120BN

ON Semiconductor

FAIRCHILD SEMICONDUCTOR HGTG27N120BN IGBT Single Transistor, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3 Pins

ACTIVE, NOT REC (Last Updated: 2 days ago)
44 Weeks
通孔
通孔
TO-247-3
3
6.39g
SILICON
1.2kV
2.45V
-55°C~150°C TJ
Tube
e3
yes
不用于新设计
1 (Unlimited)
3
EAR99
Tin (Sn)
LOW CONDUCTION LOSS, AVALANCHE RATED
8541.29.00.95
1.2kV
500W
72A
Single
500W
COLLECTOR
Standard
24 ns
电源控制
N-CHANNEL
1.2kV
72A
1200V
42 ns
2.7V @ 15V, 27A
72A
360 ns
NPT
270nC
216A
24ns/195ns
2.2mJ (on), 2.3mJ (off)
20.82mm
15.87mm
4.82mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
STGW30NC120HD

STMicroelectronics

STMICROELECTRONICS STGW30NC120HD IGBT Single Transistor, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins

ACTIVE (Last Updated: 8 months ago)
8 Weeks
通孔
通孔
TO-247-3
3
38.000013g
SILICON
1.2kV
2.75V
-55°C~150°C TJ
Tube
e3
-
活跃
1 (Unlimited)
3
EAR99
Tin (Sn)
-
-
1.2kV
220W
30A
Single
220W
-
Standard
29 ns
电源控制
N-CHANNEL
1.2kV
60A
1200V
41 ns
2.75V @ 15V, 20A
30A
928 ns
-
110nC
-
29ns/275ns
1.66mJ (on), 4.44mJ (off)
20.15mm
15.75mm
5.15mm
无SVHC
无
ROHS3 Compliant
无铅
PowerMESH™
STGW30
3
11ns
152ns
25V
5.75V
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	HGTG18N120BND	ON Semiconductor	晶体管 - IGBT - 单个	TO-247-3	IGBT 1200V 54A 390W TO247	对比
	STGW30NC120HD	STMicroelectronics	晶体管 - IGBT - 单个	TO-247-3	STMICROELECTRONICS STGW30NC120HD IGBT Single Transistor, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins	对比