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IPB65R099C6ATMA1备选型号: FCB110N65F

IPB65R099C6ATMA1

Infineon Technologies

Trans MOSFET N-CH 650V 38A 3-Pin(2 Tab) D2PAK T/R

12 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
38A Tc
-55°C~150°C TJ
Cut Tape (CT)
CoolMOS™
2008
no
Discontinued
1 (Unlimited)
2
SINGLE
鸥翼
未说明
not_compliant
未说明
4
R-PSSO-G2
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
DRAIN
10.6 ns
N-Channel
SWITCHING
99m Ω @ 12.8A, 10V
3.5V @ 1.2mA
无卤素
2780pF @ 100V
127nC @ 10V
9ns
±20V
6 ns
38A
20V
650V
0.099Ohm
115A
845 mJ
ROHS3 Compliant
含铅
-
-
-
-
-
-
-
-
-
FCB110N65F

ON Semiconductor

MOSFET N-CH 650V 35A D2PAK

13 Weeks
表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
89 ns
-55°C~150°C TJ
Tape & Reel (TR)
FRFET®, SuperFET® II
-
yes
活跃
1 (Unlimited)
2
-
鸥翼
245
not_compliant
30
-
R-PSSO-G2
-
增强型MOSFET
DRAIN
31 ns
N-Channel
SWITCHING
110m Ω @ 17.5A, 10V
5V @ 3.5mA
-
4895pF @ 100V
145nC @ 10V
21ns
±20V
5.7 ns
35A
20V
-
0.11Ohm
105A
809 mJ
ROHS3 Compliant
-
ACTIVE (Last Updated: 3 days ago)
1.31247g
e3
EAR99
Tin (Sn)
8541.29.00.95
Single
650V
650V
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分立半导体产品相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	FCB110N65F	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 650V 35A D2PAK	对比