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IPD50R380CEAUMA1备选型号: IPD65R400CEAUMA1

IPD50R380CEAUMA1

Infineon Technologies

MOSFET N CH 500V 9.9A PG-TO252

18 Weeks
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
3
SILICON
14.1A Tc
-55°C~150°C TJ
Tape & Reel (TR)
CoolMOS™
2008
yes
活跃
3 (168 Hours)
2
EAR99
SINGLE
鸥翼
未说明
not_compliant
未说明
R-PSSO-G2
SINGLE WITH BUILT-IN DIODE
1
增强型MOSFET
98W
DRAIN
7.2 ns
N-Channel
SWITCHING
380m Ω @ 3.2A, 13V
3.5V @ 260μA
无卤素
584pF @ 100V
24.8nC @ 10V
±20V
14.1A
3V
20V
500V
500V
150°C
超级交界处
2.55mm
ROHS3 Compliant
含铅
-
-
-
-
IPD65R400CEAUMA1

Infineon Technologies

MOSFET N-CH 650V TO-252

18 Weeks
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
3
SILICON
15.1A Tc
-55°C~150°C TJ
Tape & Reel (TR)
CoolMOS™
2016
yes
活跃
3 (168 Hours)
2
EAR99
SINGLE
鸥翼
未说明
not_compliant
未说明
R-PSSO-G2
SINGLE WITH BUILT-IN DIODE
-
增强型MOSFET
-
DRAIN
-
N-Channel
SWITCHING
400m Ω @ 3.2A, 10V
3.5V @ 320μA
无卤素
710pF @ 100V
39nC @ 10V
±20V
15.1A
-
-
650V
-
-
超级交界处
-
ROHS3 Compliant
含铅
e3
Tin (Sn)
0.4Ohm
215 mJ
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