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IPD65R400CEAUMA1备选型号: IPD65R380E6ATMA1

IPD65R400CEAUMA1

Infineon Technologies

MOSFET N-CH 650V TO-252

18 Weeks
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
3
SILICON
15.1A Tc
-55°C~150°C TJ
Tape & Reel (TR)
CoolMOS™
2016
e3
yes
活跃
3 (168 Hours)
2
EAR99
Tin (Sn)
SINGLE
鸥翼
未说明
not_compliant
未说明
R-PSSO-G2
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
DRAIN
N-Channel
SWITCHING
400m Ω @ 3.2A, 10V
3.5V @ 320μA
无卤素
710pF @ 100V
39nC @ 10V
±20V
15.1A
650V
0.4Ohm
215 mJ
超级交界处
ROHS3 Compliant
含铅
-
-
-
-
-
-
-
IPD65R380E6ATMA1

Infineon Technologies

Trans MOSFET N-CH 700V 10.6A Automotive 3-Pin(2 Tab) DPAK T/R

12 Weeks
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
3
SILICON
10.6A Tc
-55°C~150°C TJ
Tape & Reel (TR)
CoolMOS™ E6
2008
e3
-
不用于新设计
1 (Unlimited)
2
EAR99
Tin (Sn)
SINGLE
鸥翼
未说明
not_compliant
未说明
R-PSSO-G2
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
DRAIN
N-Channel
SWITCHING
380m Ω @ 3.2A, 10V
3.5V @ 320μA
-
710pF @ 100V
39nC @ 10V
±20V
10.6A
650V
-
215 mJ
-
ROHS3 Compliant
-
8541.29.00.95
10 ns
7ns
8 ns
TO-252AA
20V
29A
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图片	产品型号	品牌	分类	封装	描述	对比
	STD7N65M2	STMicroelectronics	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	STMICROELECTRONICS STD7N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.98 ohm, 10 V, 3 V	对比
	IPD65R380E6ATMA1	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	Trans MOSFET N-CH 700V 10.6A Automotive 3-Pin(2 Tab) DPAK T/R	对比
	IPD50R380CEAUMA1	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	MOSFET N CH 500V 9.9A PG-TO252	对比