MOSFET N-CH 55V 110A TO-262
14 Weeks
通孔
通孔
TO-262-3 Long Leads, I2Pak, TO-262AA
3
SILICON
110A Tc
-55°C~175°C TJ
Tube
HEXFET®
2002
e3
不用于新设计
1 (Unlimited)
3
EAR99
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
55V
SINGLE
260
110A
30
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
200W
DRAIN
14 ns
N-Channel
SWITCHING
8m Ω @ 62A, 10V
4V @ 250μA
3247pF @ 25V
146nC @ 10V
101ns
±20V
65 ns
110A
4V
20V
75A
0.008Ohm
55V
264 mJ
9.65mm
10.668mm
4.826mm
无SVHC
无
ROHS3 Compliant
无铅
-
MOSFET N-CH 55V 53A TO-262
12 Weeks
通孔
通孔
TO-262-3 Long Leads, I2Pak, TO-262AA
3
SILICON
53A Tc
-55°C~175°C TJ
Tube
HEXFET®
2004
e3
活跃
1 (Unlimited)
3
EAR99
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY
55V
SINGLE
260
53A
30
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
120W
DRAIN
14 ns
N-Channel
SWITCHING
16.5m Ω @ 28A, 10V
4V @ 250μA
1696pF @ 25V
72nC @ 10V
76ns
±20V
57 ns
53A
4V
20V
-
0.0165Ohm
55V
152 mJ
9.65mm
10.668mm
4.826mm
无SVHC
无
ROHS3 Compliant
无铅
180A