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IRF3315PBF备选型号: FDP2572

IRF3315PBF

Infineon Technologies

Mosfet, Power; N-ch; Vdss 150V; Rds(on) 0.082 Ohm; Id 21A; TO-220AB; Pd 94W; Vgs /-20V

14 Weeks
通孔
通孔
TO-220-3
3
SILICON
23A Tc
-55°C~175°C TJ
Tube
HEXFET®
1998
e3
不用于新设计
1 (Unlimited)
3
通孔
EAR99
82mOhm
Matte Tin (Sn) - with Nickel (Ni) barrier
AVALANCHE RATED, HIGH RELIABILITY
150V
27A
Single
增强型MOSFET
136W
DRAIN
9.6 ns
N-Channel
SWITCHING
70m Ω @ 12A, 10V
4V @ 250μA
1300pF @ 25V
95nC @ 10V
32ns
±20V
38 ns
27A
4V
TO-220AB
20V
150V
84A
150V
260 ns
4 V
8.77mm
10.54mm
4.69mm
无SVHC
无
ROHS3 Compliant
Contains Lead, Lead Free
-
-
-
-
-
-
-
-
FDP2572

ON Semiconductor

MOSFET N-CH 150V 29A TO-220AB

9 Weeks
通孔
通孔
TO-220-3
3
SILICON
4A Ta 29A Tc
-55°C~175°C TJ
Tube
PowerTrench®
2002
e3
活跃
1 (Unlimited)
3
-
EAR99
-
Tin (Sn)
-
150V
29A
Single
增强型MOSFET
135W
DRAIN
11 ns
N-Channel
SWITCHING
54m Ω @ 9A, 10V
4V @ 250μA
1770pF @ 25V
34nC @ 10V
14ns
±20V
14 ns
29A
4V
TO-220AB
20V
150V
-
-
-
4 V
9.4mm
10.67mm
4.83mm
无SVHC
-
ROHS3 Compliant
无铅
ACTIVE (Last Updated: 3 days ago)
1.8g
yes
未说明
未说明
不合格
4A
0.054Ohm
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图片	产品型号	品牌	分类	封装	描述	对比
	IRF6218PBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-220-3	MOSFET, Power; P-Ch; VDSS -150V; RDS(ON) 120 Milliohms; ID -27A; TO-220AB; PD 250W	对比
	IRFB4019PBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-220-3	MOSFET N-CH 150V 17A TO-220AB	对比
	FDP2572	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-220-3	MOSFET N-CH 150V 29A TO-220AB	对比