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IRF6614TRPBF备选型号: FDD8447L

IRF6614TRPBF

Infineon Technologies

MOSFET N-CH 40V 12.7A DIRECTFET

12 Weeks
表面贴装
表面贴装
DirectFET™ Isometric ST
5
SILICON
12.7A Ta 55A Tc
-40°C~150°C TJ
Tape & Reel (TR)
HEXFET®
2006
e1
活跃
1 (Unlimited)
3
EAR99
8.3MOhm
Tin/Silver/Copper (Sn/Ag/Cu)
40V
BOTTOM
12.7A
R-XBCC-N3
SINGLE WITH BUILT-IN DIODE
增强型MOSFET
42W
DRAIN
13 ns
N-Channel
SWITCHING
8.3m Ω @ 12.7A, 10V
2.25V @ 250μA
2560pF @ 20V
29nC @ 4.5V
27ns
±20V
3.6 ns
10.1A
1.8V
20V
40V
22 mJ
506μm
4.826mm
3.95mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
FDD8447L

ON Semiconductor

Trans MOSFET N-CH 40V 21A 3-Pin(2 Tab) TO-252 T/R

8 Weeks
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
3
SILICON
15.2A Ta 50A Tc
-55°C~150°C TJ
Tape & Reel (TR)
PowerTrench®
2016
e3
活跃
1 (Unlimited)
2
EAR99
8.5MOhm
-
40V
-
54A
R-PSSO-G2
-
增强型MOSFET
3.8W
DRAIN
12 ns
N-Channel
SWITCHING
8.5m Ω @ 14A, 10V
3V @ 250μA
1970pF @ 20V
52nC @ 10V
12ns
±20V
9 ns
15.2A
1.9V
20V
40V
-
2.39mm
6.73mm
6.22mm
无SVHC
无
ROHS3 Compliant
无铅
ACTIVE (Last Updated: 1 day ago)
Tin
260.37mg
yes
鸥翼
Single
1.9 V
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图片	产品型号	品牌	分类	封装	描述	对比
	FDD8447L	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-252-3, DPak (2 Leads + Tab), SC-63	Trans MOSFET N-CH 40V 21A 3-Pin(2 Tab) TO-252 T/R	对比
	BSC886N03LSGATMA1	Infineon Technologies	晶体管 - FET，MOSFET - 单个	8-PowerTDFN	MOSFET N-CH 30V 65A TDSON-8	对比