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MOSFET P-CH 100V 6.6A DPAK
12 Weeks
Tin
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
3
SILICON
6.6A Tc
-55°C~150°C TJ
Tape & Reel (TR)
HEXFET®
1998
e3
活跃
1 (Unlimited)
2
SMD/SMT
EAR99
480mOhm
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
-100V
鸥翼
260
-6.6A
30
R-PSSO-G2
Single
增强型MOSFET
40W
DRAIN
14 ns
P-Channel
SWITCHING
480m Ω @ 3.9A, 10V
4V @ 250μA
350pF @ 25V
27nC @ 10V
47ns
±20V
31 ns
-6.6A
-4V
TO-252AA
20V
-100V
26A
100V
150 ns
-4 V
2.3876mm
6.7056mm
6.22mm
无SVHC
无
ROHS3 Compliant
Contains Lead, Lead Free
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MOSFET N-CH 100V 8.7A DPAK
12 Weeks
Tin
表面贴装
表面贴装
TO-252-3, DPak (2 Leads + Tab), SC-63
3
SILICON
8.7A Tc
-55°C~175°C TJ
Tape & Reel (TR)
HEXFET®
2003
e3
活跃
1 (Unlimited)
2
SMD/SMT
EAR99
190MOhm
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
100V
鸥翼
260
8.7A
30
R-PSSO-G2
Single
增强型MOSFET
35W
DRAIN
8.3 ns
N-Channel
SWITCHING
190m Ω @ 5.2A, 10V
4V @ 250μA
310pF @ 25V
10nC @ 10V
26ns
±20V
23 ns
8.7A
4V
TO-252AA
20V
100V
-
100V
36 ns
4 V
2.3876mm
6.7056mm
6.22mm
无SVHC
无
ROHS3 Compliant
Contains Lead, Lead Free
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