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IRFS4010-7PPBF备选型号: IRF2907ZS-7PPBF

IRFS4010-7PPBF

Infineon Technologies

MOSFET N-CH 100V 190A D2PAK-7

表面贴装
表面贴装
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
7
SILICON
190A Tc
-55°C~175°C TJ
Tube
HEXFET®
2005
e3
Discontinued
1 (Unlimited)
6
SMD/SMT
EAR99
Matte Tin (Sn) - with Nickel (Ni) barrier
鸥翼
260
30
R-PSSO-G6
Single
增强型MOSFET
380W
DRAIN
19 ns
N-Channel
SWITCHING
4m Ω @ 110A, 10V
4V @ 250μA
9830pF @ 50V
230nC @ 10V
56ns
±20V
48 ns
60 ns
190A
4V
20V
0.004Ohm
100V
100V
330 mJ
4 V
4.55mm
10.67mm
9.65mm
无SVHC
无
ROHS3 Compliant
无铅
-
-
-
-
-
IRF2907ZS-7PPBF

Infineon Technologies

MOSFET N-CH 75V 160A D2PAK7

表面贴装
表面贴装
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
7
SILICON
160A Tc
-55°C~175°C TJ
Tube
HEXFET®
2005
e3
Obsolete
1 (Unlimited)
6
SMD/SMT
EAR99
Matte Tin (Sn) - with Nickel (Ni) barrier
鸥翼
260
30
R-PSSO-G6
Single
增强型MOSFET
300W
DRAIN
21 ns
N-Channel
SWITCHING
3.8m Ω @ 110A, 10V
4V @ 250μA
7580pF @ 25V
260nC @ 10V
90ns
±20V
44 ns
35 ns
160A
4V
20V
-
75V
75V
-
4 V
4.5466mm
10.3378mm
10.05mm
无SVHC
无
符合RoHS标准
无铅
4.5MOhm
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
75V
160A
53 ns
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图片	产品型号	品牌	分类	封装	描述	对比
	IRF2907ZS-7PPBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	MOSFET N-CH 75V 160A D2PAK7	对比
	AUIRFS4010-7P	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-7, D2Pak (6 Leads + Tab)	MOSFET N-CH 100V 190A D2PAK-7P	对比
	FDB0300N1007L	ON Semiconductor	晶体管 - FET，MOSFET - 单个	TO-263-7, D2Pak (6 Leads + Tab)	FAIRCHILD SEMICONDUCTOR FDB0300N1007L MOSFET Transistor, N Channel, 200 A, 100 V, 0.0024 ohm, 10 V, 2.7 VNew	对比