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IRFS4227PBF备选型号: IRFS4229PBF

IRFS4227PBF

Infineon Technologies

MOSFET N-CH 200V 62A D2PAK

表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
SILICON
62A Tc
-40°C~175°C TJ
Tube
HEXFET®
2005
e3
Discontinued
1 (Unlimited)
2
SMD/SMT
EAR99
Matte Tin (Sn) - with Nickel (Ni) barrier
鸥翼
260
30
R-PSSO-G2
Single
增强型MOSFET
330W
DRAIN
33 ns
N-Channel
SWITCHING
26m Ω @ 46A, 10V
5V @ 250μA
4600pF @ 25V
98nC @ 10V
20ns
±30V
31 ns
62A
5V
30V
0.026Ohm
200V
260A
240V
150 ns
5 V
4.826mm
10.67mm
9.65mm
无SVHC
无
ROHS3 Compliant
无铅
IRFS4229PBF

Infineon Technologies

MOSFET N-CH 250V 45A D2PAK

表面贴装
表面贴装
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
3
-
45A Tc
-40°C~175°C TJ
Tube
HEXFET®
2008
-
Discontinued
1 (Unlimited)
-
SMD/SMT
EAR99
-
-
-
-
-
Single
-
330W
-
18 ns
N-Channel
-
48m Ω @ 26A, 10V
5V @ 250μA
4560pF @ 25V
110nC @ 10V
-
±30V
-
45A
5V
30V
-
250V
-
250V
290 ns
5 V
4.572mm
10.67mm
9.65mm
无SVHC
-
ROHS3 Compliant
无铅
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	IRFS4229PBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 250V 45A D2PAK	对比
	IRFS4127PBF	Infineon Technologies	晶体管 - FET，MOSFET - 单个	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	MOSFET N-CH 200V 72A D2-PAK	对比