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IS41LV16105C-50TLI备选型号: AS6C1616-55TIN

IS41LV16105C-50TLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 44TSOP II

表面贴装
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
Volatile
90mA
-40°C~85°C TA
Tray
最后一次购买
3 (168 Hours)
44
EAR99
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
3.3V
DUAL
1
0.8mm
16Mb 1M x 16
1
25ns
DRAM
Parallel
16b
1MX16
16
10b
16 Mb
3.6V
3V
20.95mm
1.2mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
AS6C1616-55TIN

Alliance Memory, Inc.

SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM

表面贴装
表面贴装
48-TFSOP (0.724, 18.40mm Width)
48
Volatile
-
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
48
-
-
3V
DUAL
1
0.5mm
16Mb 1M x 16
1
-
SRAM
Parallel
-
-
-
20b
16 Mb
3.6V
2.7V
18.5mm
-
无
ROHS3 Compliant
无铅
8 Weeks
2007
yes
1MHz
55ns
55 ns
1.05mm
12.1mm
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	AS6C1616-55TIN	Alliance Memory, Inc.	存储器	48-TFSOP (0.724, 18.40mm Width)	SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM	对比
	IS42S16100E-7TL	ISSI, Integrated Silicon Solution Inc	存储器	50-TSOP (0.400, 10.16mm Width)	IC DRAM 16M PARALLEL 50TSOP II	对比
	IS41C16100C-50TLI	ISSI, Integrated Silicon Solution Inc	存储器	50-TSOP (0.400, 10.16mm Width), 44 Leads	DRAM Chip EDO 16Mbit 1Mx16 5V 44-Pin TSOP-II	对比