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IS41LV16105C-50TLI备选型号: IS42S16100E-7TL

IS41LV16105C-50TLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 44TSOP II

表面贴装
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
Volatile
90mA
-40°C~85°C TA
Tray
最后一次购买
3 (168 Hours)
44
EAR99
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
3.3V
DUAL
1
0.8mm
16Mb 1M x 16
1
25ns
DRAM
Parallel
16b
1MX16
16
10b
16 Mb
3.6V
3V
20.95mm
1.2mm
无
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
-
-
-
IS42S16100E-7TL

ISSI, Integrated Silicon Solution Inc

IC DRAM 16M PARALLEL 50TSOP II

表面贴装
表面贴装
50-TSOP (0.400, 10.16mm Width)
50
Volatile
130mA
0°C~70°C TA
Tray
Obsolete
3 (168 Hours)
50
EAR99
AUTO/SELF REFRESH
3V~3.6V
DUAL
1
0.8mm
16Mb 1M x 16
1
5.5ns
DRAM
Parallel
16b
1MX16
16
12b
16 Mb
3.6V
3V
20.95mm
1.2mm
无
符合RoHS标准
-
Tin
e3
yes
260
40
143MHz
3-STATE
0.002A
COMMON
2048
1248FP
1248
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	AS6C1616-55TIN	Alliance Memory, Inc.	存储器	48-TFSOP (0.724, 18.40mm Width)	SRAM 16M, 2.7-3.6V, 55ns 1024K x 16 Asyn SRAM	对比
	IS42S16100E-7TL	ISSI, Integrated Silicon Solution Inc	存储器	50-TSOP (0.400, 10.16mm Width)	IC DRAM 16M PARALLEL 50TSOP II	对比
	IS41C16100C-50TLI	ISSI, Integrated Silicon Solution Inc	存储器	50-TSOP (0.400, 10.16mm Width), 44 Leads	DRAM Chip EDO 16Mbit 1Mx16 5V 44-Pin TSOP-II	对比