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IS42S32200E-6BL备选型号: MT47H32M16NF-25E:H

IS42S32200E-6BL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 90FBGA

表面贴装
表面贴装
90-TFBGA
90
Volatile
0°C~70°C TA
Tray
e1
yes
Obsolete
2 (1 Year)
90
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
AUTO/SELF REFRESH
8542.32.00.02
3V~3.6V
BOTTOM
260
1
3.3V
0.8mm
40
90
3.3V
3.6V
3V
64Mb 2M x 32
1
160mA
166MHz
5.5ns
DRAM
Parallel
32b
2MX32
3-STATE
32
13b
64 Mb
0.002A
COMMON
4096
1248FP
1248
13mm
1.2mm
无
符合RoHS标准
-
-
-
-
-
-
-
MT47H32M16NF-25E:H

Micron Technology Inc.

IC DRAM 512M PARALLEL 84FBGA

表面贴装
表面贴装
84-TFBGA
84
Volatile
0°C~85°C TC
Bulk
e1
yes
活跃
3 (168 Hours)
84
EAR99
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
AUTO/SELF REFRESH
8542.32.00.28
1.7V~1.9V
BOTTOM
260
1
1.8V
0.8mm
30
84
1.8V
1.9V
1.7V
512Mb 32M x 16
1
-
-
400ps
DRAM
Parallel
16b
32MX16
3-STATE
16
13b
512 Mb
0.01A
COMMON
8192
48
48
12.5mm
-
无
ROHS3 Compliant
16 Weeks
Copper, Silver, Tin
2014
MT47H32M16
15ns
400MHz
1.2mm
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图片	产品型号	品牌	分类	封装	描述	对比
	IS42S32400F-7BLI	ISSI, Integrated Silicon Solution Inc	存储器	90-TFBGA	DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin TFBGA	对比