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IS43DR16128A-3DBLI备选型号: IS43DR16640B-3DBL

IS43DR16128A-3DBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 84LFBGA

表面贴装
84-LFBGA
YES
84
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
84
AUTO/SELF REFRESH
1.7V~1.9V
BOTTOM
1
1.8V
0.8mm
不合格
1.9V
1.8V
1.7V
2Gb 128M x 16
1
SYNCHRONOUS
333MHz
450ps
DRAM
Parallel
128MX16
3-STATE
16
15ns
0.03A
2147483648 bit
COMMON
8192
48
48
13.5mm
1.4mm
10.5mm
ROHS3 Compliant
无铅
-
-
-
-
-
-
-
-
-
IS43DR16640B-3DBL

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR2 SDRAM 1Gbit 64M X 16 1.8V 84-Pin TWBGA Tray

表面贴装
84-TFBGA
-
84
Volatile
0°C~70°C TA
Tray
活跃
3 (168 Hours)
84
AUTO/SELF REFRESH
1.7V~1.9V
BOTTOM
1
1.8V
0.8mm
不合格
1.9V
-
1.7V
1Gb 64M x 16
1
SYNCHRONOUS
333MHz
450ps
DRAM
Parallel
64MX16
3-STATE
16
15ns
0.015A
-
COMMON
8192
48
48
12.5mm
1.2mm
-
ROHS3 Compliant
-
8 Weeks
表面贴装
EAR99
8542.32.00.32
1.8V
220mA
16b
16b
1 Gb
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43DR16320C-3DBLI-TR	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM 512Mb, 1.8V, 333MHz 32M x 16 DDR2	对比
	IS43DR16640B-3DBL	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM Chip DDR2 SDRAM 1Gbit 64M X 16 1.8V 84-Pin TWBGA Tray	对比