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IS43DR16640B-3DBLI备选型号: IS46DR16640B-3DBLA2

IS43DR16640B-3DBLI

ISSI, Integrated Silicon Solution Inc

DRAM 1G (64Mx16) 333MHz 1.8v DDR2 SDRAM

8 Weeks
Copper, Silver, Tin
表面贴装
表面贴装
84-TFBGA
84
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
84
EAR99
AUTO/SELF REFRESH
8542.32.00.32
1.7V~1.9V
BOTTOM
1
1.8V
0.8mm
1.8V
1.9V
1.7V
1Gb 64M x 16
1
220mA
333MHz
450ps
DRAM
Parallel
16b
64MX16
3-STATE
16
15ns
16b
1 Gb
0.015A
COMMON
8192
48
48
12.5mm
1.2mm
无
ROHS3 Compliant
-
IS46DR16640B-3DBLA2

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin TW-BGA

8 Weeks
-
表面贴装
表面贴装
84-TFBGA
84
Volatile
-40°C~105°C TA
Tray
活跃
3 (168 Hours)
84
EAR99
AUTO/SELF REFRESH
8542.32.00.32
1.7V~1.9V
BOTTOM
1
1.8V
0.8mm
1.8V
1.9V
1.7V
1Gb 64M x 16
1
220mA
333MHz
450ps
DRAM
Parallel
16b
64MX16
3-STATE
16
15ns
16b
1 Gb
0.015A
COMMON
8192
48
48
12.5mm
1.2mm
无
ROHS3 Compliant
AEC-Q100
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS46DR16640B-3DBLA2	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin TW-BGA	对比
	IS46DR16640B-25DBLA1	ISSI, Integrated Silicon Solution Inc	存储器	84-TFBGA	DRAM Automotive 1G,1.8V 64Mx16 DDR2 SDRAM	对比