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IS43DR86400C-3DBLI备选型号: IS66WVC4M16ALL-7010BLI

IS43DR86400C-3DBLI

ISSI, Integrated Silicon Solution Inc

DRAM 512M, 1.8V, 333Mhz 64Mx8 DDR2 SDRAM

8 Weeks
表面贴装
表面贴装
60-TFBGA
60
Volatile
250mA
-40°C~85°C TA
Tray
e1
活跃
3 (168 Hours)
60
Tin/Silver/Copper (Sn/Ag/Cu)
AUTO/SELF REFRESH
1.8V
BOTTOM
1
0.8mm
120mA
512Mb 64M x 8
1
333MHz
450ps
DRAM
Parallel
8b
64MX8
3-STATE
8
15ns
16b
512 Mb
0.011A
COMMON
1.9V
1.7V
8192
48
48
10.5mm
1.2mm
无
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
IS66WVC4M16ALL-7010BLI

ISSI, Integrated Silicon Solution Inc

SRAM 64Mb 1.54M x 16 70ns Pseudo SRAM

-
表面贴装
表面贴装
54-VFBGA
54
Volatile
-
-40°C~85°C TA
Tray
e1
Discontinued
3 (168 Hours)
54
Tin/Silver/Copper (Sn/Ag/Cu)
-
1.8V
BOTTOM
1
0.75mm
-
64Mb 4M x 16
-
-
-
PSRAM
Parallel
-
4MX16
3-STATE
16
70ns
-
-
0.00001A
COMMON
1.95V
1.7V
-
-
-
8mm
1mm
无
ROHS3 Compliant
yes
3A991.B.2.A
260
40
1.8V
67108864 bit
70 ns
6mm
无铅
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