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IS43LR16160G-6BLI备选型号: IS43R16160D-5BL

IS43LR16160G-6BLI

ISSI, Integrated Silicon Solution Inc

DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM

14 Weeks
Copper, Silver, Tin
表面贴装
表面贴装
60-TFBGA
60
Volatile
-40°C~85°C TA
Tray
e1
活跃
3 (168 Hours)
60
Tin/Silver/Copper (Sn/Ag/Cu)
AUTO/SELF REFRESH
1.8V
BOTTOM
1
0.8mm
256Mb 16M x 16
1
SYNCHRONOUS
166MHz
5.5ns
DRAM
Parallel
16b
16MX16
16
15ns
13b
256 Mb
1.95V
1.7V
10mm
1.1mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
IS43R16160D-5BL

ISSI, Integrated Silicon Solution Inc

DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM

8 Weeks
-
表面贴装
表面贴装
60-TFBGA
60
Volatile
0°C~70°C TA
Tray
-
活跃
3 (168 Hours)
60
-
AUTO/SELF REFRESH
2.5V
BOTTOM
1
0.8mm
256Mb 16M x 16
1
-
200MHz
700ps
DRAM
Parallel
16b
16MX16
16
15ns
15b
256 Mb
2.7V
2.3V
13mm
1.2mm
ROHS3 Compliant
330mA
EAR99
8542.32.00.24
3-STATE
0.004A
COMMON
8192
248
248
无
无铅
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS43R16160D-5BL	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM	对比
	IS42S16160G-6BL	ISSI, Integrated Silicon Solution Inc	存储器	54-TFBGA	DRAM 256M 16Mx16 166Mhz SDR SDRAM, 3.3V	对比