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IS43TR16256A-15HBL备选型号: MT41K256M16TW-093:P

IS43TR16256A-15HBL

ISSI, Integrated Silicon Solution Inc

4G, 1.5V, Ddr3, 256Mx16, 1333Mt/S @ 9-9-9, 96 Ball Bga (9Mm X13mm) Rohs

6 Weeks
表面贴装
表面贴装
96-TFBGA
96
Volatile
200mA
0°C~95°C TC
Tray
活跃
3 (168 Hours)
96
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
1.5V
BOTTOM
1
0.8mm
267mA
4Gb 256M x 16
1
SYNCHRONOUS
667MHz
20ns
DRAM
Parallel
16b
256MX16
16
15ns
18b
4 Gb
1.575V
1.425V
13mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
MT41K256M16TW-093:P

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

-
表面贴装
表面贴装
96-TFBGA
96
Volatile
-
0°C~95°C TC
Tray
活跃
3 (168 Hours)
96
AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
1.35V
BOTTOM
1
0.8mm
-
4Gb 256M x 16
1
SYNCHRONOUS
1067MHz
20ns
DRAM
Parallel
16b
256MX16
16
-
15b
4 Gb
1.45V
1.283V
14mm
1.2mm
ROHS3 Compliant
Copper, Silver, Tin
2017
e1
yes
EAR99
Tin/Silver/Copper (Sn/Ag/Cu)
8542.32.00.36
260
30
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	IS43TR85120A-15HBL	ISSI, Integrated Silicon Solution Inc	存储器	78-TFBGA	DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TWBGA	对比
	MT41K256M16TW-093:P	Micron Technology Inc.	存储器	96-TFBGA	IC DRAM 4G PARALLEL 96FBGA	对比