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IS43TR85120A-125KBL备选型号: MT41K512M8DA-107:P

IS43TR85120A-125KBL

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TWBGA

8 Weeks
表面贴装
78-TFBGA
YES
78
Volatile
0°C~95°C TC
Tray
活跃
3 (168 Hours)
78
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
1.5V
BOTTOM
1
0.8mm
不合格
4Gb 512M x 8
1
SYNCHRONOUS
800MHz
20ns
DRAM
Parallel
512MX8
3-STATE
8
15ns
16b
4 Gb
0.018A
COMMON
1.575V
1.425V
8192
48
48
10.5mm
1.2mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
MT41K512M8DA-107:P

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

-
表面贴装
78-TFBGA
-
78
Volatile
0°C~95°C TC
Tray
活跃
3 (168 Hours)
78
AUTO/SELF REFRESH
1.35V
BOTTOM
1
0.8mm
-
4Gb 512M x 8
1
SYNCHRONOUS
933MHz
20ns
DRAM
Parallel
512MX8
-
8
-
16b
4 Gb
-
-
1.45V
1.283V
-
-
-
10.5mm
-
ROHS3 Compliant
Copper, Silver, Tin
表面贴装
2015
EAR99
未说明
未说明
8b
1.2mm
无铅
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	MT41K512M8DA-107:P	Micron Technology Inc.	存储器	78-TFBGA	IC DRAM 4G PARALLEL 78FBGA	对比