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IS46LR16320C-6BLA2备选型号: IS43R16320D-6BLI

IS46LR16320C-6BLA2

ISSI, Integrated Silicon Solution Inc

DRAM 512M, 1.8V, 166Mhz Mobile DDR SDRAM

14 Weeks
表面贴装
表面贴装
60-TFBGA
60
Volatile
-40°C~105°C TA
Tray
活跃
3 (168 Hours)
60
AUTO/SELF REFRESH
1.7V~1.95V
BOTTOM
1
1.8V
0.8mm
不合格
1.8V
1.95V
1.7V
512Mb 32M x 16
1
110mA
SYNCHRONOUS
60mA
166MHz
5.5ns
DRAM
Parallel
16b
32MX16
3-STATE
16
15ns
15b
512 Mb
0.0003A
AEC-Q100
COMMON
8192
24816
24816
10mm
1.1mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
IS43R16320D-6BLI

ISSI, Integrated Silicon Solution Inc

DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V 60-Pin TFBGA

8 Weeks
表面贴装
表面贴装
60-TFBGA
60
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
60
AUTO/SELF REFRESH
2.3V~2.7V
BOTTOM
1
2.5V
1mm
-
2.5V
2.7V
2.3V
512Mb 32M x 16
1
370mA
-
-
166MHz
700ps
DRAM
Parallel
16b
32MX16
3-STATE
16
15ns
15b
512 Mb
0.025A
-
COMMON
8192
248
248
13mm
1.2mm
ROHS3 Compliant
e1
yes
EAR99
锡银铜
8542.32.00.28
260
40
60
无
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	IS43R16320D-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V 60-Pin TFBGA	对比
	IS43LR16320C-6BLI	ISSI, Integrated Silicon Solution Inc	存储器	60-TFBGA	DRAM 512M, 1.8V, 166Mhz Mobile DDR SDRAM	对比