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IS46TR16256A-15HBLA2备选型号: IS43TR16256A-15HBL

IS46TR16256A-15HBLA2

ISSI, Integrated Silicon Solution Inc

DRAM 4G, 1.5V, 1333MT/s DDR3 SDRAM

10 Weeks
表面贴装
表面贴装
96-TFBGA
96
Volatile
200mA
-40°C~105°C TC
Tray
活跃
3 (168 Hours)
96
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
1.5V
BOTTOM
1
0.8mm
267mA
不合格
4Gb 256M x 16
1
SYNCHRONOUS
667MHz
20ns
DRAM
Parallel
16b
256MX16
3-STATE
16
15ns
18b
4 Gb
0.018A
AEC-Q100
COMMON
1.575V
1.425V
8192
48
48
13mm
1.2mm
ROHS3 Compliant
IS43TR16256A-15HBL

ISSI, Integrated Silicon Solution Inc

4G, 1.5V, Ddr3, 256Mx16, 1333Mt/S @ 9-9-9, 96 Ball Bga (9Mm X13mm) Rohs

6 Weeks
表面贴装
表面贴装
96-TFBGA
96
Volatile
200mA
0°C~95°C TC
Tray
活跃
3 (168 Hours)
96
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
1.5V
BOTTOM
1
0.8mm
267mA
-
4Gb 256M x 16
1
SYNCHRONOUS
667MHz
20ns
DRAM
Parallel
16b
256MX16
-
16
15ns
18b
4 Gb
-
-
-
1.575V
1.425V
-
-
-
13mm
1.2mm
ROHS3 Compliant
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图片	产品型号	品牌	分类	封装	描述	对比
	IS43TR16256AL-15HBL-TR	ISSI, Integrated Silicon Solution Inc	存储器	96-TFBGA	DRAM 4G, 1.35V, 1333MT/s DDR3L	对比
	MT40A256M16GE-083E:B	Micron Technology Inc.	存储器	96-TFBGA	IC DRAM 4G PARALLEL 96FBGA	对比
	IS43TR16256A-15HBL	ISSI, Integrated Silicon Solution Inc	存储器	96-TFBGA	4G, 1.5V, Ddr3, 256Mx16, 1333Mt/S @ 9-9-9, 96 Ball Bga (9Mm X13mm) Rohs	对比