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IS61DDB24M18A-300B4LI备选型号: IS61QDB22M18-250M3L

IS61DDB24M18A-300B4LI

ISSI, Integrated Silicon Solution Inc

SRAM 72Mb, 4M x 18 DDR-II Sync SRAM

12 Weeks
表面贴装
165-LBGA
YES
165
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
165
3A991.B.2.A
流水线结构
8542.32.00.41
1.71V~1.89V
BOTTOM
未说明
1
1.8V
1mm
未说明
165
1.89V
1.71V
72Mb 4M x 18
300MHz
450 ps
SRAM
Parallel
4MX18
18
75497472 bit
15mm
1.4mm
13mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS61QDB22M18-250M3L

ISSI, Integrated Silicon Solution Inc

SRAM 36Mb 2Mbx18 250Mhz QUAD Sync SRAM

-
表面贴装
165-LBGA
-
165
Volatile
0°C~70°C TA
Tray
Discontinued
2 (1 Year)
165
-
流水线结构
-
1.71V~1.89V
BOTTOM
260
1
1.8V
1mm
40
165
1.89V
1.71V
36Mb 2M x 18
250MHz
7.5ns
SRAM
Parallel
-
18
-
17mm
1.7mm
-
Non-RoHS Compliant
表面贴装
e1
yes
Tin/Silver/Copper (Sn/Ag/Cu)
1.8V
2
700mA
3-STATE
20b
36 Mb
SEPARATE
Synchronous
18b
1.71V
无
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	IS61QDB22M18-250M3L	ISSI, Integrated Silicon Solution Inc	存储器	165-LBGA	SRAM 36Mb 2Mbx18 250Mhz QUAD Sync SRAM	对比
	IS61DDB21M18A-300B4L	ISSI, Integrated Silicon Solution Inc	存储器	165-LBGA	SRAM 18Mb, 1M x 18 DDR-II Sync SRAM	对比
	IS61DDB22M36A-300B4LI	ISSI, Integrated Silicon Solution Inc	存储器	165-LBGA	SRAM 72Mb, 2M x 36 DDR-II Sync SRAM	对比