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IS61NLP102436B-200B3LI备选型号: MT49H16M36BM-33:B

IS61NLP102436B-200B3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 36M PARALLEL 165TFBGA

12 Weeks
表面贴装
165-TBGA
YES
165
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
165
3A991.B.2.A
8542.32.00.41
3.3V
BOTTOM
1
1mm
不合格
2.5/3.33.3V
36Mb 1M x 36
200MHz
3.1ns
SRAM
Parallel
1MX36
3-STATE
36
0.12A
37748736 bit
COMMON
3.14V
3.465V
3.135V
15mm
1.2mm
13mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT49H16M36BM-33:B

Micron Technology Inc.

DRAM Chip RLDRAM 576M-Bit 16Mx36 1.8V 144-Pin mBGA Tray

-
表面贴装
144-TFBGA
-
144
Volatile
0°C~95°C TC
Bulk
Discontinued
3 (168 Hours)
144
EAR99
8542.32.00.32
1.8V
BOTTOM
1
1mm
-
1.5/1.81.82.5V
576Mb 16M x 36
-
20ns
DRAM
Parallel
16MX36
3-STATE
36
0.055A
-
COMMON
-
1.9V
1.7V
18.5mm
1.2mm
-
ROHS3 Compliant
表面贴装
2015
e1
Tin/Silver/Copper (Sn/Ag/Cu)
自动刷新
MT49H16M36
1
36b
23b
576 Mb
300MHz
248
无
无铅
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集成电路（IC）相关产品

图片	产品型号	品牌	分类	封装	描述	对比
	MT49H16M36BM-33:B	Micron Technology Inc.	存储器	144-TFBGA	DRAM Chip RLDRAM 576M-Bit 16Mx36 1.8V 144-Pin mBGA Tray	对比
	IS61NLP51236B-200B3LI	ISSI, Integrated Silicon Solution Inc	存储器	165-TBGA	IC SRAM 18M PARALLEL 165TFBGA	对比
	IS61NVP51236B-200B3LI	ISSI, Integrated Silicon Solution Inc	存储器	165-TBGA	IC SRAM 18M PARALLEL 165TFBGA	对比