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IS61WV51216EDBLL-10TLI-TR备选型号: IS61WV10248EDBLL-10TLI

IS61WV51216EDBLL-10TLI-TR

ISSI, Integrated Silicon Solution Inc

SRAM 8M, 2.4-3.6V, 10ns 512Kx16 Asych SRAM

8 Weeks
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
Volatile
-40°C~85°C TA
Tape & Reel (TR)
活跃
3 (168 Hours)
2.4V~3.6V
8Mb 512K x 16
SRAM
Parallel
10ns
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS61WV10248EDBLL-10TLI

ISSI, Integrated Silicon Solution Inc

SRAM 8M, 2.4V-3.6V, 10ns LP Async SRAM

8 Weeks
表面贴装
44-TSOP (0.400, 10.16mm Width)
44
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
3V
8Mb 1M x 8
SRAM
Parallel
10ns
ROHS3 Compliant
YES
44
DUAL
1
0.8mm
不合格
2.5/3.3V
1MX8
3-STATE
8
0.015A
8388608 bit
10 ns
COMMON
2V
3.6V
2.4V
18.41mm
1.2mm
10.16mm
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图片	产品型号	品牌	分类	封装	描述	对比
	IS61WV10248EDBLL-10TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM 8M, 2.4V-3.6V, 10ns LP Async SRAM	对比
	CY7C1021DV33-10ZSXIT	Cypress Semiconductor Corp	存储器	44-TSOP (0.400, 10.16mm Width)	CYPRESS SEMICONDUCTOR CY7C1021DV33-10ZSXIT SRAM, 1MBIT, PARALLEL, 10NS, TSOP-44	对比
	IS61WV25616BLL-10TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width)	IC SRAM 4M PARALLEL 44TSOP II	对比