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IS61WV51216EDBLL-8TLI备选型号: IS62WV51216BLL-55TLI

IS61WV51216EDBLL-8TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 44TSOP2

8 Weeks
表面贴装
44-TSOP (0.400, 10.16mm Width)
YES
44
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
44
2.4V~3.6V
DUAL
1
3V
0.8mm
不合格
3.6V
2.5/3.3V
2.4V
8Mb 512K x 16
SRAM
Parallel
512KX16
3-STATE
16
8ns
0.015A
8388608 bit
8 ns
COMMON
2V
18.41mm
1.2mm
10.16mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IS62WV51216BLL-55TLI

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 44-Pin TSOP-II

8 Weeks
表面贴装
44-TSOP (0.400, 10.16mm Width)
YES
44
Volatile
-40°C~85°C TA
Tray
活跃
3 (168 Hours)
44
2.5V~3.6V
DUAL
1
3V
0.8mm
-
3.6V
-
2.5V
8Mb 512K x 16
SRAM
Parallel
-
3-STATE
-
55ns
0.00002A
-
55 ns
COMMON
-
18.52mm
-
10.29mm
ROHS3 Compliant
e3
yes
Matte Tin (Sn) - annealed
260
40
44
3.3V
1
5mA
19b
8 Mb
18MHz
Asynchronous
16b
1.05mm
无SVHC
无
无铅
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图片	产品型号	品牌	分类	封装	描述	对比
	IS62WV51216BLL-55TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width)	SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 44-Pin TSOP-II	对比
	IS61WV25616BLL-10TLI	ISSI, Integrated Silicon Solution Inc	存储器	44-TSOP (0.400, 10.16mm Width)	IC SRAM 4M PARALLEL 44TSOP II	对比
	CY7C1021DV33-10ZSXIT	Cypress Semiconductor Corp	存储器	44-TSOP (0.400, 10.16mm Width)	CYPRESS SEMICONDUCTOR CY7C1021DV33-10ZSXIT SRAM, 1MBIT, PARALLEL, 10NS, TSOP-44	对比