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IS62WV25616BLL-55BLI备选型号: IS61WV25616BLL-10BLI

IS62WV25616BLL-55BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4M PARALLEL 48MINIBGA

8 Weeks
表面贴装
表面贴装
48-TFBGA
48
Volatile
15mA
-40°C~85°C TA
Tray
e1
yes
活跃
2 (1 Year)
48
Tin/Silver/Copper (Sn/Ag/Cu)
3.3V
BOTTOM
260
1
0.75mm
40
4Mb 256K x 16
1
SRAM
Parallel
3-STATE
16
55ns
18b
4 Mb
18MHz
55 ns
COMMON
Asynchronous
16b
3.6V
2.5V
8mm
无
ROHS3 Compliant
-
-
-
-
-
-
IS61WV25616BLL-10BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4M PARALLEL 48MINIBGA

8 Weeks
-
表面贴装
48-TFBGA
48
Volatile
45mA
-40°C~85°C TA
Tray
e1
yes
活跃
3 (168 Hours)
48
Tin/Silver/Copper (Sn/Ag/Cu)
3.3V
BOTTOM
260
1
0.75mm
40
4Mb 256K x 16
1
SRAM
Parallel
3-STATE
-
10ns
18b
4 Mb
-
-
COMMON
Asynchronous
16b
3.6V
2.4V
8.1mm
无
ROHS3 Compliant
YES
2.5/3.3V
0.009A
2V
900μm
6.1mm
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图片	产品型号	品牌	分类	封装	描述	对比
	IS61WV25616BLL-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 4M PARALLEL 48MINIBGA	对比
	IS61LV25616AL-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin Mini-BGA	对比
	IS61WV25616BLL-10BLI-TR	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 4M PARALLEL 48MINIBGA	对比