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IS64WV12816DBLL-12BLA3备选型号: 71V416L15BEI

IS64WV12816DBLL-12BLA3

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 2.5V/3.3V 2M-bit 128K x 16 12ns Automotive 48-Pin Mini-BGA

10 Weeks
表面贴装
48-TFBGA
YES
48
Volatile
-40°C~125°C TA
Tray
e1
yes
活跃
3 (168 Hours)
48
Tin/Silver/Copper (Sn/Ag/Cu)
2.4V~3.6V
BOTTOM
260
1
3.3V
0.75mm
10
48
不合格
3.6V
2.5/3.3V
2.4V
2Mb 128K x 16
1
60mA
SRAM
Parallel
3-STATE
16
12ns
17b
2 Mb
COMMON
Asynchronous
16b
2V
8mm
ROHS3 Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
71V416L15BEI

Integrated Device Technology (IDT)

SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 15ns 48-Pin CABGA Tube/Tray

12 Weeks
-
TFBGA
-
48
RAM, SDR, SRAM - Asynchronous
-
-
e0
no
活跃
4 (72 Hours)
48
Tin/Lead (Sn63Pb37)
-
BOTTOM
225
1
3.3V
0.75mm
20
48
-
-
-
-
512kB
1
160mA
-
-
3-STATE
-
-
18b
4 Mb
COMMON
Asynchronous
16b
3V
9mm
符合RoHS标准
表面贴装
2013
85°C
-40°C
BALL
3.3V
INDUSTRIAL
Parallel
3.6V
3V
15 ns
9mm
1.2mm
无
含铅
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图片	产品型号	品牌	分类	封装	描述	对比
	IS62WV12816BLL-55BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 2M PARALLEL 48MINIBGA	对比
	IS62WV12816BLL-55B2LI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 2M PARALLEL 48MINIBGA	对比
	71V416L15BEI	Integrated Device Technology (IDT)	存储器	TFBGA	SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 15ns 48-Pin CABGA Tube/Tray	对比