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IS64WV25616EDBLL-10BLA3备选型号: IS62WV25616BLL-55BLI

IS64WV25616EDBLL-10BLA3

ISSI, Integrated Silicon Solution Inc

SRAM Chip Async Single 2.5V/3.3V 4M-Bit 256K x 16 10ns 48-Pin Mini-BGA

10 Weeks
YES
48-TFBGA
表面贴装
48
Volatile
Tray
-40°C~125°C TA
活跃
3 (168 Hours)
48
2.4V~3.6V
BOTTOM
1
0.75mm
2.5/3.3V
4Mb 256K x 16
1
SRAM
Parallel
3-STATE
16
10ns
18b
4 Mb
COMMON
2V
3.6V
2.4V
8mm
ROHS3 Compliant
无
-
-
-
-
-
-
-
-
-
-
-
IS62WV25616BLL-55BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4M PARALLEL 48MINIBGA

8 Weeks
-
48-TFBGA
表面贴装
48
Volatile
Tray
-40°C~85°C TA
活跃
2 (1 Year)
48
3.3V
BOTTOM
1
0.75mm
-
4Mb 256K x 16
1
SRAM
Parallel
3-STATE
16
55ns
18b
4 Mb
COMMON
-
3.6V
2.5V
8mm
ROHS3 Compliant
无
表面贴装
15mA
e1
yes
Tin/Silver/Copper (Sn/Ag/Cu)
260
40
18MHz
55 ns
Asynchronous
16b
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图片	产品型号	品牌	分类	封装	描述	对比
	IS61WV25616BLL-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	IC SRAM 4M PARALLEL 48MINIBGA	对比
	IS61LV25616AL-10BLI	ISSI, Integrated Silicon Solution Inc	存储器	48-TFBGA	SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin Mini-BGA	对比
	71V416L15BEG	Integrated Device Technology (IDT)	存储器	TFBGA	SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 15ns 48-Pin CABGA Tube/Tray	对比